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DMN2013UFX-7 Images
- Manufacturer: Diodes Inc. (Diodes)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 6-VFDFN Exposed Pad
- Description: MOSFET 2N-CH 20V 10A 6-DFN
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DMN2013UFX-7 Specifications:
- MfrPart.: DMN2013UFX-7
- Mfr: Diodes Incorporated
- Description: MOSFET 2N-CH 20V 10A 6-DFN
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR)
- Series: Automotive, AEC-Q101
- PartStatus: Active
- FETType: 2 N-Channel (Dual) Common Drain
- FETFeature: Standard
- DraintoSourceVoltage(Vdss): 20V
- Current-ContinuousDrain(Id)@25°C: 10A (Ta)
- RdsOn(Max)@IdVgs: 11.5mOhm @ 8.5A, 4.5V
- Vgs(th)(Max)@Id: 1.1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 57.4nC @ 8V
- InputCapacitance(Ciss)(Max)@Vds: 2607pF @ 10V
- Power-Max: 2.14W
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: 6-VFDFN Exposed Pad
- DMN2013UFX-7 Diodes Inc. (Diodes), MOSFET 2N-CH 20V 10A 6-DFN, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
DMN2013UFX-7, Diodes authentic parts in stock from Diodes Inc. (Diodes) authorized distributors, order today, can ship immediately.
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